发明申请
- 专利标题: SEMICONDUCTOR DEVICE WITH FIELD ELECTRODE AND METHOD
- 专利标题(中): 具有场电极和方法的半导体器件
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申请号: US12143450申请日: 2008-06-20
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公开(公告)号: US20090315108A1公开(公告)日: 2009-12-24
- 发明人: Oliver Haeberlen
- 申请人: Oliver Haeberlen
- 申请人地址: AT Villach
- 专利权人: Infineon Technologies Austria AG
- 当前专利权人: Infineon Technologies Austria AG
- 当前专利权人地址: AT Villach
- 主分类号: H01L29/00
- IPC分类号: H01L29/00 ; H01L21/76
摘要:
A semiconductor device with a field electrode and method. One embodiment provides a controllable semiconductor device including a control electrode for controlling the semiconductor device and a field electrode. The field electrode includes a number of longish segments which extend in a first lateral direction and which run substantially parallel to one another. The control electrode includes a number of longish segments extending in a second lateral direction and running substantially parallel to one another, wherein the first lateral direction is different from the second lateral direction.
公开/授权文献
- US08581342B2 Semiconductor device with field electrode and method 公开/授权日:2013-11-12
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