发明申请
US20090315120A1 RAISED FACET- AND NON-FACET 3D SOURCE/DRAIN CONTACTS IN MOSFETS
审中-公开
MOSFET中提供的面板和非面板3D源/漏极接触
- 专利标题： RAISED FACET- AND NON-FACET 3D SOURCE/DRAIN CONTACTS IN MOSFETS
- 专利标题（中）： MOSFET中提供的面板和非面板3D源/漏极接触
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申请号： US12145296申请日： 2008-06-24
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公开(公告)号： US20090315120A1公开(公告)日： 2009-12-24
- 发明人: Lucian Shifren , Keith Zawadzki , Martin Giles , Cory Weber
- 申请人： Lucian Shifren , Keith Zawadzki , Martin Giles , Cory Weber
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
An apparatus comprising a semiconductor substrate; a conductively doped source or drain (source/drain) region at the surface of the substrate; a raised semiconductor layer deposited over the source/drain region to form a raised source/drain region; a via formed in the raised source/drain region having substantially vertical sidewalls reaching partly or substantially to the source/drain region; and a metal contact filling the via.
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