发明申请
US20090315185A1 SELECTIVE ELECTROLESS METAL DEPOSITION FOR DUAL SALICIDE PROCESS
审中-公开
选择性电解金属沉积双重杀菌工艺
- 专利标题： SELECTIVE ELECTROLESS METAL DEPOSITION FOR DUAL SALICIDE PROCESS
- 专利标题（中）： 选择性电解金属沉积双重杀菌工艺
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申请号： US12143248申请日： 2008-06-20
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公开(公告)号： US20090315185A1公开(公告)日： 2009-12-24
- 发明人: Boyan Boyanov , Ramanan Chebiam
- 申请人： Boyan Boyanov , Ramanan Chebiam
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/44
摘要：
A method for forming dual salicide contacts includes depositing a low or mid-gap work function metal selectively on an NMOS source/drain (S/D) region of a semiconductor device via electroless deposition; depositing a high work function metal selectively over the low work function metal and a PMOS source/drain (S/D) region of a semiconductor device via electroless deposition; annealing the semiconductor device to form a silicide of the low work function metal over the NMOS source/drain (S/D) region and a silicide of the high work function metal over the PMOS source/drain (S/D) region; and performing a SALICIDE etch to remove the unreacted metals from all regions of the substrate.