发明申请
- 专利标题: RF POWER DELIVERY SYSTEM IN A SEMICONDUCTOR APPARATUS
- 专利标题(中): 射频功率传输系统在半导体设备
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申请号: US12146189申请日: 2008-06-25
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公开(公告)号: US20090321019A1公开(公告)日: 2009-12-31
- 发明人: Zhigang Chen , Shahid Rauf , Kartik Ramaswamy
- 申请人: Zhigang Chen , Shahid Rauf , Kartik Ramaswamy
- 主分类号: C23F1/08
- IPC分类号: C23F1/08
摘要:
Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes.
公开/授权文献
- US08206552B2 RF power delivery system in a semiconductor apparatus 公开/授权日:2012-06-26
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