发明申请
US20090323228A1 TUNNELING MAGNETORESISTIVE (TMR) DEVICE WITH IMPROVED FERROMAGNETIC UNDERLAYER FOR MgO TUNNELING BARRIER LAYER
有权
用于MgO隧道障碍层的改进的铁磁性层下的隧道磁阻（TMR）装置
- 专利标题： TUNNELING MAGNETORESISTIVE (TMR) DEVICE WITH IMPROVED FERROMAGNETIC UNDERLAYER FOR MgO TUNNELING BARRIER LAYER
- 专利标题（中）： 用于MgO隧道障碍层的改进的铁磁性层下的隧道磁阻（TMR）装置
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申请号： US12553864申请日： 2009-09-03
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公开(公告)号： US20090323228A1公开(公告)日： 2009-12-31
- 发明人: Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- 申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- 申请人地址： US CA San Jose
- 专利权人： Intellectual Property Law
- 当前专利权人： Intellectual Property Law
- 当前专利权人地址： US CA San Jose
- 主分类号： G11B5/127
- IPC分类号： G11B5/127
摘要：
A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording hard disk drive, has a magnesium oxide (MgO) tunneling barrier layer and a ferromagnetic underlayer beneath and in direct contact with the MgO tunneling barrier layer. The ferromagnetic underlayer comprises a crystalline material according to the formula (CoxFe(100-x))(100-y)Gey, where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 26 and 37. The ferromagnetic underlayer may be the CoxFe(100-x))(100-y)Gey portion of a bilayer of two ferromagnetic layers, for example a CoFe/(CoxFe(100-x))(100-y)Gey bilayer. The specific composition of the ferromagnetic underlayer improves the crystallinity of the MgO tunneling barrier after annealing and improves the tunneling magnetoresistance of the TMR device.
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