发明申请
- 专利标题： Superhard dielectric compounds and methods of preparation
- 专利标题（中）： 超硬电介质化合物及其制备方法
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申请号： US11968546申请日： 2008-01-02
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公开(公告)号： US20090324475A1公开(公告)日： 2009-12-31
- 发明人: John Kouvetakis , I.S.T. Tsong , Levi Torrison , John Tolle
- 申请人： John Kouvetakis , I.S.T. Tsong , Levi Torrison , John Tolle
- 专利权人： Arizona Board of Regents, a body corporate of the state of Arizona, acting for and on behalf of
- 当前专利权人： Arizona Board of Regents, a body corporate of the state of Arizona, acting for and on behalf of
- 主分类号： C01B35/10
- IPC分类号： C01B35/10 ; C01B33/26
摘要：
Novel superhard dielectric compounds useful as gate dielectrics in microelectronic devices have been discovered. Low temperature methods for making thin films of the compounds on substrate silicon are provided. The methods comprise the step of contacting a precursor having the formula H3X—O—XH3, wherein X is silicon or carbon with a compound comprising boron or nitrogen In a chemical vapor deposition (CVD) chamber or with one or more atomic elements in a molecular beam epitaxial deposition (MBE) chamber. These thin film constructs are useful as components of microelectronic devices, and specifically as gate dielectrics in CMOS devices.
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