发明申请
- 专利标题： SELF-ALIGNED NANOTUBE FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING SAME
- 专利标题（中）： 自对准纳米管场效应晶体管及其制备方法
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申请号： US12544436申请日： 2009-08-20
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公开(公告)号： US20100001260A1公开(公告)日： 2010-01-07
- 发明人: Joerg Appenzeller , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
- 申请人： Joerg Appenzeller , Phaedon Avouris , Kevin K. Chan , Philip G. Collins , Richard Martel , Hon-Sum Philip Wong
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/336
摘要：
A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.
公开/授权文献
- US08138491B2 Self-aligned nanotube field effect transistor 公开/授权日：2012-03-20
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