发明申请
US20100001619A1 PEROVSKITE-TYPE OXIDE SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME, COMPOSITE PIEZOELECTRIC MATERIAL, PIEZOELECTRIC VIBRATOR, ULTRASONIC PROBE, AND ULTRASONIC DIAGNOSTIC APPARATUS
审中-公开
PEROVSKITE型氧化物单晶及其制造方法，复合压电材料，压电振动器，超声波探头和超声诊断装置
- 专利标题： PEROVSKITE-TYPE OXIDE SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME, COMPOSITE PIEZOELECTRIC MATERIAL, PIEZOELECTRIC VIBRATOR, ULTRASONIC PROBE, AND ULTRASONIC DIAGNOSTIC APPARATUS
- 专利标题（中）： PEROVSKITE型氧化物单晶及其制造方法，复合压电材料，压电振动器，超声波探头和超声诊断装置
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申请号： US12487245申请日： 2009-06-18
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公开(公告)号： US20100001619A1公开(公告)日： 2010-01-07
- 发明人: Shigenorii Yuuya , Masayuki Suzuki , Masahiro Takata
- 申请人： Shigenorii Yuuya , Masayuki Suzuki , Masahiro Takata
- 申请人地址： JP Tokyo
- 专利权人： FUJIFILM Corporation
- 当前专利权人： FUJIFILM Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-175744 20080704
- 主分类号： B06B1/06
- IPC分类号： B06B1/06 ; C30B1/02 ; C01G23/04 ; B32B27/06 ; H01L41/22
摘要：
A method of manufacturing a perovskite-type oxide single crystal having a desired composition and exhibiting excellent properties. The method includes the steps of: (a) forming a precursor of a perovskite-type oxide, at least a part of which is in an amorphous state, on a seed single crystal substrate to prepare a complex of the seed single crystal and the precursor, and (b) heat-treating the complex to induce solid phase epitaxy in the precursor, and thereby, forming a single crystal of the perovskite-type oxide.
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