发明申请
- 专利标题： MAGNETIC SHIFT REGISTER MEMORY DEVICE
- 专利标题（中）： 磁性移位寄存器存储器件
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申请号： US12168379申请日： 2008-07-07
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公开(公告)号： US20100002486A1公开(公告)日： 2010-01-07
- 发明人: John K. DeBrosse , William J. Gallagher , Yu Lu
- 申请人： John K. DeBrosse , William J. Gallagher , Yu Lu
- 主分类号： G11C19/02
- IPC分类号： G11C19/02 ; G11C11/416
摘要：
In one embodiment, the invention is a magnetic shift register memory device. One embodiment of a memory cell includes a magnetic column including a plurality of magnetic domains, a reader coupled to the magnetic column, for reading data from the magnetic domains, a temporary memory for storing data read from the magnetic domains, and a writer coupled to the magnetic column, for writing data in the temporary memory to the magnetic domains.
公开/授权文献
- US08228706B2 Magnetic shift register memory device 公开/授权日：2012-07-24