发明申请
US20100006935A1 Breakdown Voltages of Ultra-High Voltage Devices By Forming Tunnels
有权
通过形成隧道的超高压器件的故障电压
- 专利标题： Breakdown Voltages of Ultra-High Voltage Devices By Forming Tunnels
- 专利标题（中）： 通过形成隧道的超高压器件的故障电压
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申请号： US12170246申请日： 2008-07-09
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公开(公告)号： US20100006935A1公开(公告)日： 2010-01-14
- 发明人: Eric Huang , Tsung-Yi Huang , Fu-Hsin Chen , Chyi-Chyuan Huang , Chung-Yeh Wu
- 申请人： Eric Huang , Tsung-Yi Huang , Fu-Hsin Chen , Chyi-Chyuan Huang , Chung-Yeh Wu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring of the first conductivity type occupying a top portion of the HVW, wherein at least one of the pre-HVW, the HVW, and the field ring comprises at least two tunnels; an insulation region over the field ring and a portion of the HVW; a drain region in the HVW and adjacent the insulation region; a gate electrode over a portion the insulation region; and a source region on an opposite side of the gate electrode than the drain region.
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