发明申请
- 专利标题: MEMORY SYSTEM
- 专利标题(中): 记忆系统
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申请号: US12513860申请日: 2007-11-28
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公开(公告)号: US20100011260A1公开(公告)日: 2010-01-14
- 发明人: Yasushi Nagadomi , Daisaburo Takashima , Kosuke Hatsuda , Shinichi Kanno
- 申请人: Yasushi Nagadomi , Daisaburo Takashima , Kosuke Hatsuda , Shinichi Kanno
- 申请人地址: JP Minato-ku,Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Minato-ku,Tokyo
- 优先权: JP2006-322868 20061130
- 国际申请: PCT/JP2007/072898 WO 20071128
- 主分类号: G11C29/04
- IPC分类号: G11C29/04 ; G06F11/22 ; G06F11/00
摘要:
To provide a memory system which determines a memory state such as an exhaustion level and allows a memory to be efficiently used.The memory system includes a NAND type flash memory 1 in which data can be electrically written/erased, a nonvolatile memory 2 which counts the number of erase operations of the NAND type flash memory 1 and retains the number of erase operations and a maximum number of erase operations, and a controller 3 which has a connection interface 31 to be given a self-diagnosis command from a computer 4, and retrieves the number of erase operations and the maximum number of erase operations from the nonvolatile memory 2 based on the self-diagnosis command and outputs the number of erase operations and the maximum number of erase operations to the computer 4 through the connection interface 31.
公开/授权文献
- US08156393B2 Memory system 公开/授权日:2012-04-10
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