发明申请
US20100012954A1 Vertical III-Nitride Light Emitting Diodes on Patterned Substrates with Embedded Bottom Electrodes
审中-公开
垂直III型氮化物发光二极管在嵌有底部电极的图案衬底上
- 专利标题： Vertical III-Nitride Light Emitting Diodes on Patterned Substrates with Embedded Bottom Electrodes
- 专利标题（中）： 垂直III型氮化物发光二极管在嵌有底部电极的图案衬底上
-
申请号： US12191033申请日： 2008-08-13
-
公开(公告)号： US20100012954A1公开(公告)日： 2010-01-21
- 发明人: Chen-Hua Yu , Chia-Lin Yu , Wen-Chih Chiou , Ding-Yuan Chen , Hung-Ta Lin
- 申请人： Chen-Hua Yu , Chia-Lin Yu , Wen-Chih Chiou , Ding-Yuan Chen , Hung-Ta Lin
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/00
摘要：
A light emitting diode (LED) device is presented. The LED device includes a substrate, a layered LED structure, and an embedded bottom electrode. The layered LED structure includes a buffer/nucleation layer disposed on the substrate, an active layer, and a top-side contact. A first-contact III-nitride layer is interposed between the buffer/nucleation layer and the active layer. A second-contact III-nitride layer is interposed between the active well layer and the top-side contact. A bottom electrode extends through the substrate, through the buffer/nucleation layer and terminates within the first-contact III-nitride layer.
信息查询
IPC分类:
