Invention Application
- Patent Title: METAL OXIDE SEMICONDUCTOR DEVICES HAVING IMPLANTED CARBON DIFFUSION RETARDATION LAYERS AND METHODS FOR FABRICATING THE SAME
- Patent Title (中): 带有碳化硅扩散层的金属氧化物半导体器件及其制造方法
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Application No.: US12176916Application Date: 2008-07-21
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Publication No.: US20100012988A1Publication Date: 2010-01-21
- Inventor: Frank Bin YANG , Michael J. HARGROVE , Rohit PAL
- Applicant: Frank Bin YANG , Michael J. HARGROVE , Rohit PAL
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/8236
Abstract:
Semiconductor devices and methods for fabricating semiconductor devices are provided. One exemplary method comprises providing a silicon-comprising substrate having a first surface, etching a recess into the first surface, the recess having a side surface and a bottom surface, implanting carbon ions into the side surface and the bottom surface, and forming an impurity-doped, silicon-comprising region overlying the side surface and the bottom surface.
Public/Granted literature
- US1300726A Pin-ticketing machine. Public/Granted day:1919-04-15
Information query
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