发明申请
- 专利标题： POWER SEMICONDUCTOR DEVICE
- 专利标题（中）： 功率半导体器件
-
申请号： US12504225申请日： 2009-07-16
-
公开(公告)号： US20100013085A1公开(公告)日： 2010-01-21
- 发明人: Takeshi Oi , Seiji Oka , Yoshiko Obiraki , Osamu Usui , Yasushi Nakayama
- 申请人： Takeshi Oi , Seiji Oka , Yoshiko Obiraki , Osamu Usui , Yasushi Nakayama
- 申请人地址： JP Chiyoda-ku
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2008-186603 20080718
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L23/28 ; H01L23/48
摘要：
A power semiconductor device includes power semiconductor elements joined to wiring patterns of a circuit substrate, cylindrical external terminal communication sections, and wiring means for forming electrical connection between, for example, the power semiconductor elements and the cylindrical external terminal communication sections. The power semiconductor elements, the cylindrical external terminal communication sections, and the wiring means are sealed with transfer molding resin. The cylindrical external terminal communication sections are arranged on the wiring patterns so as to be substantially perpendicular to the wiring patterns, such that external terminals are insertable and connectable to the cylindrical external terminal communication sections, and such that a plurality of cylindrical external terminal communication sections among the cylindrical external terminal communication sections are arranged two-dimensionally on each of wiring patterns that act as main circuits.
公开/授权文献
- US08994165B2 Power semiconductor device 公开/授权日：2015-03-31
信息查询
IPC分类:
