- 专利标题: PIXEL SENSOR CELL WITH FRAME STORAGE CAPABILITY
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申请号: US12174264申请日: 2008-07-16
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公开(公告)号: US20100013972A1公开(公告)日: 2010-01-21
- 发明人: James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
- 申请人: James W. Adkisson , John J. Ellis-Monaghan , Rajendran Krishnasamy , Solomon Mulugeta , Charles F. Musante , Richard J. Rassel
- 主分类号: H04N5/335
- IPC分类号: H04N5/335
摘要:
A set of frame transfer transistors are provided between a hold gate transistor and a transfer gate transistor of a CMOS image sensor to enable storage of charge generate in the photosensitive diode after exposure. The readout of the charges from the set of frame transfer transistors may be performed after a plurality of exposures of the CMOS image sensor, between each of which charges are shifted toward the transfer gate transistor within the set of frame transfer transistors. Useful operation modes are enabled including a burst mode operation for rapid capture of successive images and high dynamic range operations in which multiple images are taken with different exposure times or a large capacitance is provided by ganging the diffusions of the set of frame transfer transistors.
公开/授权文献
- US08009215B2 Pixel sensor cell with frame storage capability 公开/授权日:2011-08-30
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