发明申请
- 专利标题： Deposition Donor Substrate and Method for Manufacturing Light-Emitting Device
- 专利标题（中）： 沉积施主基板和制造发光器件的方法
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申请号： US12503220申请日： 2009-07-15
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公开(公告)号： US20100015424A1公开(公告)日： 2010-01-21
- 发明人: Satoshi Seo , Kohei Yokoyama
- 申请人： Satoshi Seo , Kohei Yokoyama
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 优先权： JP2008-188004 20080721
- 主分类号： B32B7/02
- IPC分类号： B32B7/02 ; B29C71/02
摘要：
One surface of a first substrate provided with at least light-absorbing layers separately formed, partition layers each formed between the light-absorbing layers and having an inverse taper shape, and material layers formed on the light-absorbing layers and on the partition layers so that the material layers are separated from each other is disposed to face a deposition target surface of a second substrate; light irradiation is performed from the other surface of the first substrate, only the material layers in regions overlapped with the light-absorbing layers are heated and evaporated to the deposition target surface of the second substrate.
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