发明申请
- 专利标题: HALL-EFFECT MAGNETIC SENSORS WITH IMPROVED MAGNETIC RESPONSIVITY AND METHODS FOR MANUFACTURING THE SAME
- 专利标题(中): 具有改进的磁性响应的霍尔效应磁传感器及其制造方法
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申请号: US12178144申请日: 2008-07-23
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公开(公告)号: US20100019331A1公开(公告)日: 2010-01-28
- 发明人: Wayne Kilian
- 申请人: Wayne Kilian
- 专利权人: Honeywell International Inc.
- 当前专利权人: Honeywell International Inc.
- 主分类号: H01L43/06
- IPC分类号: H01L43/06
摘要:
A Hall-effect magnetic sensor comprises a p-type Hall element and an n-type epitaxial Hall element. The p-type element can be implanted directly on top of the n-type element. The merged Hall elements can be biased in parallel to provide a nearly zero-bias depletion layer throughout for isolation. Electrical contacts to the n-type element can be diffused down through the p-type element and positioned to partially obstruct current flow in the p-type element. Electrical contacts can be diffused into the p-type element. Each bias contact of the p-type element can be connected to respective bias contacts of the n-type element in a parallel fashion. Then, an output signal can be taken at the sense contacts of the n-type element in order to provide improved magnetic responsivity. Further provided is a method for manufacturing the Hall-effect magnetic sensor.