发明申请
US20100019336A1 MEMS DEVICES HAVING OVERLYING SUPPORT STRUCTURES AND METHODS OF FABRICATING THE SAME
有权
具有过度支持结构的MEMS器件及其制造方法
- 专利标题: MEMS DEVICES HAVING OVERLYING SUPPORT STRUCTURES AND METHODS OF FABRICATING THE SAME
- 专利标题(中): 具有过度支持结构的MEMS器件及其制造方法
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申请号: US12510046申请日: 2009-07-27
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公开(公告)号: US20100019336A1公开(公告)日: 2010-01-28
- 发明人: Teruo Sasagawa , SuryaPrakash Ganti , Mark W. Miles , Clarence Chui , Manish Kothari , Ming-Hau Tung
- 申请人: Teruo Sasagawa , SuryaPrakash Ganti , Mark W. Miles , Clarence Chui , Manish Kothari , Ming-Hau Tung
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM MEMS Technologies, Inc.
- 当前专利权人: QUALCOMM MEMS Technologies, Inc.
- 当前专利权人地址: US CA San Diego
- 主分类号: H01L31/02
- IPC分类号: H01L31/02 ; H01L31/18
摘要:
Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.
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