发明申请
- 专利标题： Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method
- 专利标题（中）： 形成用于该方法的小型化图案和抗蚀底物处理溶液的方法
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申请号： US12311725申请日： 2007-10-12
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公开(公告)号： US20100021700A1公开(公告)日： 2010-01-28
- 发明人: Go Noya , Ryuta Shimazaki , Masakazu Kobayashi
- 申请人： Go Noya , Ryuta Shimazaki , Masakazu Kobayashi
- 优先权： JP2006-285312 20061019
- 国际申请： PCT/JP2007/069977 WO 20071012
- 主分类号： B32B3/10
- IPC分类号： B32B3/10 ; G03F7/20 ; G03F7/00
摘要：
The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method.
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