发明申请
- 专利标题： SEMICONDUCTOR DEVICE COMPRISING A SILICON/GERMANIUM RESISTOR
- 专利标题（中）： 包含硅/锗电阻的半导体器件
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申请号： US12477365申请日： 2009-06-03
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公开(公告)号： US20100025772A1公开(公告)日： 2010-02-04
- 发明人: Andreas Kurz , Roman Boschke , Christoph Schwan , John Morgan
- 申请人： Andreas Kurz , Roman Boschke , Christoph Schwan , John Morgan
- 优先权： DE102008035808.8 20080731
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/02
摘要：
In integrated circuits, resistors may be formed on the basis of a silicon/germanium material, thereby providing a reduced specific resistance which may allow reduced dimensions of the resistor elements. Furthermore, a reduced dopant concentration may be used which may allow an increased process window for adjusting resistance values while also reducing overall cycle times.