Invention Application
US20100025809A1 Integrated Circuit and Method of Forming Sealed Trench Junction Termination
审中-公开
形成密封沟槽接线端子的集成电路和方法
- Patent Title: Integrated Circuit and Method of Forming Sealed Trench Junction Termination
- Patent Title (中): 形成密封沟槽接线端子的集成电路和方法
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Application No.: US12182699Application Date: 2008-07-30
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Publication No.: US20100025809A1Publication Date: 2010-02-04
- Inventor: Ronald R. Bowman
- Applicant: Ronald R. Bowman
- Applicant Address: US AZ Tempe
- Assignee: TRION TECHNOLOGY, INC.
- Current Assignee: TRION TECHNOLOGY, INC.
- Current Assignee Address: US AZ Tempe
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L21/331
Abstract:
An integrated circuit having a substrate with a first conductivity type of semiconductor material. A buried layer is formed in the substrate. The buried layer has a second conductivity type of semiconductor material. A first semiconductor layer is formed over the buried layer. The first semiconductor layer has the second conductivity type of semiconductor material. A trench is formed through the first semiconductor layer and buried layer and extends into the substrate. The trench is lined with an insulating layer and filled with an insulating material. A second semiconductor layer is formed in the first semiconductor layer. The second semiconductor layer has the first conductivity type of semiconductor material. A third semiconductor layer is formed in the second semiconductor layer. The third semiconductor layer has the second conductivity type of semiconductor material. The first, second, and third semiconductor layers form the collector, base, and emitter of a bipolar transistor.
Information query
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