发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题(中): 半导体器件及其制造方法
-
申请号: US12183077申请日: 2008-07-31
-
公开(公告)号: US20100025815A1公开(公告)日: 2010-02-04
- 发明人: Shian-Jyh Lin , Chih-Wei Huang , Chao-Sung Lai , Hsing-Kan Peng
- 申请人: Shian-Jyh Lin , Chih-Wei Huang , Chao-Sung Lai , Hsing-Kan Peng
- 主分类号: H01L29/94
- IPC分类号: H01L29/94 ; H01L21/02 ; C01B21/00
摘要:
A semiconductor device including a metallic compound Hfx1Moy1Nz1 as an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.
公开/授权文献
- US07911028B2 Semiconductor device and method of manufacturing the same 公开/授权日:2011-03-22