A sputtering apparatus includes a substrate holding section that holds a substrate on which surface a film is formed; a plate-shaped target made of a material of the film and disposed in a position facing the surface of the substrate in an atmosphere of a predetermined gas; a magnetic field generator that is disposed on a side, opposed to the substrate side, of the target, that generates a magnetic field having an arc shape with a vertex reaching the substrate side, and that rotates the magnetic field along the target; a power source that applies, to the target, voltage of a polarity causing ions of the predetermined gas to head for the target; and a magnetic plate that is inserted between the target and the magnetic field generator and that limits the magnetic field reaching the target at a part of a rotation path of the magnetic field.