发明申请
- 专利标题: METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题(中): 制造半导体器件的方法
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申请号: US12534380申请日: 2009-08-03
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公开(公告)号: US20100029053A1公开(公告)日: 2010-02-04
- 发明人: Hiroshi Itokawa , Ichiro Mizushima , Kiyotaka Miyano
- 申请人: Hiroshi Itokawa , Ichiro Mizushima , Kiyotaka Miyano
- 优先权: JP2008-200742 20080804; JP2009-144058 20090617
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/322
摘要:
A method of manufacturing a semiconductor device for forming an n-type FET has forming an isolation insulating film on a surface of the semiconductor substrate consisting primarily of silicon, the isolation insulating film partitioning a device region of the semiconductor substrate; forming a gate insulating film on the device region of the semiconductor substrate; forming a gate electrode on the gate insulating film; amorphizing regions to be source/drain contact regions adjacent to the gate electrode, of the device region, by ion implanting of one of a carbon cluster ion, a carbon monomer ion and a molecular ion containing carbon into the regions to be the source/drain contact regions; forming an impurity-implanted layer to be the source/drain contact regions by ion implanting at least one of arsenic and phosphorus as an n-type impurity into the amorphized regions; and activating the carbon and the impurity in the impurity-implanted layer by heat treatment.
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