发明申请
- 专利标题： Semiconductor Device Producing Method, Substrate Producing Method and Substrate Processing Apparatus
- 专利标题（中）： 半导体器件生产方法，基板生产方法和基板加工设备
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申请号： US11887347申请日： 2006-03-30
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公开(公告)号： US20100029092A1公开(公告)日： 2010-02-04
- 发明人: Naoto Nakamura , Iwao Nakamura , Ryota Sasajima
- 申请人： Naoto Nakamura , Iwao Nakamura , Ryota Sasajima
- 申请人地址： JP TOKYO
- 专利权人： HITACHI KIKUSAI ELECTRIC INC.
- 当前专利权人： HITACHI KIKUSAI ELECTRIC INC.
- 当前专利权人地址： JP TOKYO
- 优先权： JP2005-101275 20050331
- 国际申请： PCT/JP2006/306722 WO 20060330
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; B05C11/00
摘要：
A method is provided with a step of supplying a reacting furnace (200) with a plurality of gases which react each other and an inert gas and oxidizing a substrate (20) under an atmospheric pressure, and a step of carrying out the substrate (20) after oxidizing from the reacting furnace. In the oxidizing step, the partial pressure of the oxidizing gas is kept constant by changing a flow quantity of the inert gas in accordance with atmospheric pressure variation, and a flow quantity of the inert gas is calculated based on a previously calculated flow quantity of a gas generated by the reaction of the gases and a gas remained without being consumed by the reaction.
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