发明申请
US20100032289A1 METHOD FOR ULTRA-UNIFORM SPUTTER DEPOSITION USING SIMULTANEOUS RF AND DC POWER ON TARGET
有权
使用同步射频和直流电源对目标进行超均匀溅射沉积的方法
- 专利标题： METHOD FOR ULTRA-UNIFORM SPUTTER DEPOSITION USING SIMULTANEOUS RF AND DC POWER ON TARGET
- 专利标题（中）： 使用同步射频和直流电源对目标进行超均匀溅射沉积的方法
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申请号： US12188937申请日： 2008-08-08
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公开(公告)号： US20100032289A1公开(公告)日： 2010-02-11
- 发明人: RONGJUN WANG , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Maurice E. Ewert
- 申请人： RONGJUN WANG , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Maurice E. Ewert
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： C23C14/00
- IPC分类号： C23C14/00
摘要：
In a plasma-enhanced physical vapor deposition reactor, uniformity of radial distribution of the deposition rate across the workpiece is enhanced by applying both RF and D.C. power to the target and adjusting the power levels of the RF and D.C. power independently. Further optimization is obtained by adjusting the height of the magnet above the target, adjusting the radius of the orbital motion of the magnet above the target and providing an angle edge surface of the target.