发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12580573申请日： 2009-10-16
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公开(公告)号： US20100032733A1公开(公告)日： 2010-02-11
- 发明人: Satoru ITOU , Yasutoshi Okuno , Takashi Nakabayashi
- 申请人： Satoru ITOU , Yasutoshi Okuno , Takashi Nakabayashi
- 申请人地址： JP Osaka
- 专利权人： PANASONIC CORPORATION
- 当前专利权人： PANASONIC CORPORATION
- 当前专利权人地址： JP Osaka
- 优先权： JP2008-037142 20080219
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/20
摘要：
A semiconductor device includes: a semiconductor substrate having an element formation region containing impurities of a first conductivity type; a gate electrode formed on the element formation region with a gate insulating film interposed therebetween; and a silicon alloy layer formed on a lateral side of the gate electrode in the element formation region, and containing impurities of a second conductivity type. A boundary layer containing impurities of the second conductivity type is formed between the silicon alloy layer and the element formation region.
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