发明申请
- 专利标题: WAVELENGTH SELECTION METHOD, FILM THICKNESS MEASUREMENT METHOD, FILM THICKNESS MEASUREMENT APPARATUS, AND SYSTEM FOR PRODUCING THIN FILM SILICON DEVICE
- 专利标题(中): 波长选择方法,薄膜厚度测量方法,薄膜厚度测量装置和用于生产薄膜硅器件的系统
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申请号: US12517122申请日: 2007-10-31
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公开(公告)号: US20100033735A1公开(公告)日: 2010-02-11
- 发明人: Satoshi SAKAI , Masami IIDA , Kohei KAWAZOE
- 申请人: Satoshi SAKAI , Masami IIDA , Kohei KAWAZOE
- 申请人地址: JP Tokyo
- 专利权人: MITSUBISHI HEAVY INDUSTRIES, LTD.
- 当前专利权人: MITSUBISHI HEAVY INDUSTRIES, LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-039594 20070220
- 国际申请: PCT/JP2007/071179 WO 20071031
- 主分类号: G01B11/06
- IPC分类号: G01B11/06
摘要:
An object is to reduce film thickness measurement error. Illumination light having different wavelengths is radiated onto a plurality of samples in which thin films having different film qualities and film thicknesses are provided on substrates, evaluation values related to the amounts of transmitted light when the illumination light of each wavelength is radiated are measured, film thickness characteristics, showing the relationship between the evaluation values and the film thicknesses for each film quality, are formed at each wavelength based on the measurement results, and among the film thickness characteristics, a wavelength at which a measurement difference between the evaluation values caused by the film qualities is in a predetermined range is selected.