发明申请
- 专利标题： HOLLOW STRUCTURE FORMING SUBSTRATE, METHOD OF PRODUCING HOLLOW STRUCTURE FORMING SUBSTRATE, AND METHOD OF PRODUCING HOLLOW STRUCTURE USING HOLLOW STRUCTURE FORMING SUBSTRATE
- 专利标题（中）： 中空结构形成基板，形成基底的中空结构的方法和使用中空结构形成基板的中空结构的制造方法
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申请号： US12518981申请日： 2008-01-10
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公开(公告)号： US20100035040A1公开(公告)日： 2010-02-11
- 发明人: Masahiro Masuzawa , Masaru Ohgaki
- 申请人： Masahiro Masuzawa , Masaru Ohgaki
- 优先权： JP2007-017716 20070129
- 国际申请： PCT/JP08/50560 WO 20080110
- 主分类号： B32B3/26
- IPC分类号： B32B3/26 ; B28B7/16 ; B28B7/38 ; B29D22/00
摘要：
A hollow structure forming substrate includes: a surface on which a plastic-deformation film is formed by using a plastic-deformable material; a plurality of regularly-arranged gas-retaining spaces; a plurality of gas leading-out parts each having a first opening which faces corresponding one of the gas-retaining spaces and a second opening which faces the surface, the gas leading-out parts leads out gas retained in the gas-retaining spaces toward the surface under depressurized environmental condition; and a plurality of infiltration preventing spaces each provided in a space between corresponding one of the first openings and corresponding one of the second openings, in which the infiltration preventing spaces prevent infiltration of the plastic-deformable material from the surface into the gas-retaining spaces.