发明申请
- 专利标题： Method for manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US12461313申请日： 2009-08-07
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公开(公告)号： US20100035402A1公开(公告)日： 2010-02-11
- 发明人: Toshiyuki Hirota
- 申请人： Toshiyuki Hirota
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 优先权： JP2008-205449 20080808
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/768
摘要：
A method for manufacturing a semiconductor device includes forming a first interlayer insulating film over a semiconductor substrate; forming a first opening in the first interlayer insulating film; forming a second interlayer insulating film on the first interlayer insulating film such that the first opening is not filled; and forming a second opening in the second interlayer insulating film such that the second opening is connected to the first opening.
公开/授权文献
- US08071439B2 Method for manufacturing semiconductor device 公开/授权日：2011-12-06
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