发明申请
- 专利标题： MAGNET-ASSISTED TRANSISTOR DEVICES
- 专利标题（中）： 磁铁辅助晶体管器件
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申请号： US12193065申请日： 2008-08-18
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公开(公告)号： US20100038735A1公开(公告)日： 2010-02-18
- 发明人: Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
- 申请人： Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L21/00
摘要：
A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.
公开/授权文献
- US07948045B2 Magnet-assisted transistor devices 公开/授权日：2011-05-24
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