发明申请
- 专利标题: Single crystal substrate and method of fabricating the same
- 专利标题(中): 单晶基板及其制造方法
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申请号: US12461315申请日: 2009-08-07
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公开(公告)号: US20100041214A1公开(公告)日: 2010-02-18
- 发明人: Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Xiaoxin Zhang , Huaxiang Yin
- 申请人: Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Xiaoxin Zhang , Huaxiang Yin
- 优先权: KR10-2004-0099745 20041201; KR10-2005-0016266 20050226
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
A high quality single crystal substrate and a method of fabricating the same are provided. The method of fabricating a single crystal substrate includes: forming an insulator on a substrate; forming a window in the insulator, the window exposing a portion of the substrate; forming an epitaxial growth silicon or germanium seed layer on the portion of the substrate exposed through the window; depositing a silicon or germanium material layer, which are crystallization target material layers, on the epitaxial growth silicon 6r germanium seed layer and the insulator; and crystallizing the crystallization target material layer by melting and cooling the crystallization target material layer.