发明申请
- 专利标题： ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND ELECTROSTATIC DISCHARGE PROTECTION METHOD OF A SEMICONDUCTOR MEMORY DEVICE
- 专利标题（中）： 半导体存储器件的静电放电保护电路和静电放电保护方法
-
申请号： US12611212申请日： 2009-11-03
-
公开(公告)号： US20100046131A1公开(公告)日： 2010-02-25
- 发明人: Jung Eon Moon , Dae Gwan Kang , Kook Whee Kwak , Nak Heon Choi , Si Woo Lee , Hee Jeong Son , Yun Suk , Seong Hoon Jeong , Joon Won Lee
- 申请人： Jung Eon Moon , Dae Gwan Kang , Kook Whee Kwak , Nak Heon Choi , Si Woo Lee , Hee Jeong Son , Yun Suk , Seong Hoon Jeong , Joon Won Lee
- 申请人地址： KR Kyoungki-do
- 专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址： KR Kyoungki-do
- 优先权： KR10-2006-0034092 20060414
- 主分类号： H02H9/04
- IPC分类号： H02H9/04
摘要：
An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD.
公开/授权文献
信息查询
