发明申请
- 专利标题： HYBRID MULTI-LAYER MASK
- 专利标题（中）： 混合多层面膜
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申请号： US12250338申请日： 2008-10-13
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公开(公告)号： US20100047698A1公开(公告)日： 2010-02-25
- 发明人: Feng-Lung Lin , Kuan-Liang Wu , Che-Rong Liang , Fei-Gwo Tsai
- 申请人： Feng-Lung Lin , Kuan-Liang Wu , Che-Rong Liang , Fei-Gwo Tsai
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： G03F1/14
- IPC分类号： G03F1/14 ; H01L21/027 ; G03F7/20
摘要：
A hybrid mask set for exposing a plurality of layers on a semiconductor substrate to create an integrated circuit device is disclosed. The hybrid mask set includes a first group of one or more multi-layer masks (MLMs) for a first subset of the plurality of layers. Each MLM includes a plurality of different images for different layers, the images being separated by a relatively wide image spacer. The hybrid mask set also includes a first group of one or more production-ready masks for a second subset of the plurality of layers. Each production-ready mask includes a plurality of similar images for a common layer, each image being separated by a relatively narrow scribe street.
公开/授权文献
- US08003281B2 Hybrid multi-layer mask 公开/授权日：2011-08-23
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