发明申请
- 专利标题: THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME
- 专利标题(中): 薄膜晶体管阵列基板及其制造方法
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申请号: US12500506申请日: 2009-07-09
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公开(公告)号: US20100051933A1公开(公告)日: 2010-03-04
- 发明人: Do-Hyun Kim , Je-Hun Lee , Pil-Sang Yun , Dong-Hoon Lee , Bong-Kyun Kim
- 申请人: Do-Hyun Kim , Je-Hun Lee , Pil-Sang Yun , Dong-Hoon Lee , Bong-Kyun Kim
- 优先权: KR10-2008-0086277 20080902
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L21/336
摘要:
A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other.
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