利索-全球专利检索

  1. 登录
  2. 注册
发明申请
US20100052170A1 METAL LINE OF SEMICONDUCTOR DEVICE HAVING A DIFFUSION BARRIER AND METHOD FOR FORMING THE SAME 失效
具有扩散障碍物的半导体器件的金属线及其形成方法

METAL LINE OF SEMICONDUCTOR DEVICE HAVING A DIFFUSION BARRIER AND METHOD FOR FORMING THE SAME
摘要：
A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a multi-layered structure that includes an MoB2 layer, an MoxByNz layer and an Mo layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.
摘要（中）：

半导体器件的金属线包括形成在半导体衬底上的绝缘层。 绝缘层具有金属线形成区域。 在绝缘层的金属线形成区域的表面上形成扩散阻挡层。 扩散阻挡层包括包含MoB 2层，MoxByNz层和Mo层的多层结构。 在扩散阻挡层上形成金属层以填充绝缘层的金属线形成区域。

公开/授权文献
信息查询
Global Dossier Espacenet
0/0