发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12540952申请日： 2009-08-13
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公开(公告)号： US20100052176A1公开(公告)日： 2010-03-04
- 发明人: Yoichi Kamada , Naoya Okamoto
- 申请人： Yoichi Kamada , Naoya Okamoto
- 申请人地址： JP Kawasaki-shi
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2008-221412 20080829
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L21/768 ; C23C14/34
摘要：
A semiconductor device includes a first wiring extending in a first direction and a second wiring extending in a second direction which crosses the first direction and being disposed with a space interposed between the first wiring and the second wiring, and including a tantalum layer, a tantalum nitride layer formed over the tantalum layer, and a metal layer formed over the tantalum nitride layer.
公开/授权文献
- US08084794B2 Semiconductor device and manufacturing method thereof 公开/授权日：2011-12-27