发明申请
US20100055829A1 APPARATUS AND METHODS FOR FORMING PHASE CHANGE LAYER AND METHOD OF MANUFACTURING PHASE CHANGE MEMORY DEVICE
有权
用于形成相位变化层的装置和方法以及制造相变存储器件的方法
- 专利标题： APPARATUS AND METHODS FOR FORMING PHASE CHANGE LAYER AND METHOD OF MANUFACTURING PHASE CHANGE MEMORY DEVICE
- 专利标题（中）： 用于形成相位变化层的装置和方法以及制造相变存储器件的方法
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申请号： US12550897申请日： 2009-08-31
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公开(公告)号： US20100055829A1公开(公告)日： 2010-03-04
- 发明人: Dong-Hyun Im , Byoungjae Bae , Dohyung Kim , Sunglae Cho , Jinil Lee , Juhyung Seo , Hyeyoung Park , Takehiko Fujita
- 申请人： Dong-Hyun Im , Byoungjae Bae , Dohyung Kim , Sunglae Cho , Jinil Lee , Juhyung Seo , Hyeyoung Park , Takehiko Fujita
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2008-0086959 20080903
- 主分类号： H01L21/06
- IPC分类号： H01L21/06
摘要：
Provided are apparatus and methods for forming phase change layers, and methods of manufacturing a phase change memory device. A source material is supplied to a reaction chamber, and purges from the chamber. A pressure of the chamber is varied according to the supply of the source material and the purge of the source material.
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