发明申请
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12591085申请日： 2009-11-06
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公开(公告)号： US20100055859A1公开(公告)日： 2010-03-04
- 发明人: Takayuki Ito , Toshihiko Iinuma , Kyoichi Suguro
- 申请人： Takayuki Ito , Toshihiko Iinuma , Kyoichi Suguro
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 优先权： JP2002-113570 20020416
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/425
摘要：
Disclosed is a method for manufacturing a semiconductor device comprising implanting ions of an impurity element into a semiconductor region, implanting, into the semiconductor region, ions of a predetermined element which is a group IV element or an element having the same conductivity type as the impurity element and larger in mass number than the impurity element, and irradiating a region into which the impurity element and the predetermined element are implanted with light to anneal the region, the light having an emission intensity distribution, a maximum point of the distribution existing in a wavelength region of not more than 600 nm.
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