发明申请
- 专利标题: SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题(中): 基板加工装置及制造半导体装置的方法
-
申请号: US12548752申请日: 2009-08-27
-
公开(公告)号: US20100055918A1公开(公告)日: 2010-03-04
- 发明人: Takayuki Nakada , Tomoyuki Matsuda , Shinya Morita
- 申请人: Takayuki Nakada , Tomoyuki Matsuda , Shinya Morita
- 优先权: JP2008-222061 20080829; JP2009-162263 20090708
- 主分类号: H01L21/465
- IPC分类号: H01L21/465
摘要:
Metal corrosion and substrate contamination can be suppressed, and process quality and yield can be improved. A substrate processing apparatus comprises: a process chamber; a substrate holder; a cover part closing and opening the process chamber; a substrate holder stage; a rotary mechanism rotating the substrate holder stage; a rotation shaft inserted through the cover part and connected to the substrate holder stage and the rotary mechanism so that a first gas ejection port is formed therebetween; a first gas stagnant part surrounded by the rotary mechanism, the cover part, and the rotation shaft; a second gas ejection port formed at the substrate holder stage; a second gas stagnant part formed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and a flow port formed at the rotation shaft for connecting the first and second gas stagnant parts.
公开/授权文献
信息查询
IPC分类: