发明申请
US20100059793A1 InP BASED HETEROJUNCTION BIPOLAR TRANSISTORS WITH EMITTER-UP AND EMITTER-DOWN PROFILES ON A COMMON WAFER
失效
基于InP的异常双极晶体管，在通用波形上具有发射和发射的特性
- 专利标题： InP BASED HETEROJUNCTION BIPOLAR TRANSISTORS WITH EMITTER-UP AND EMITTER-DOWN PROFILES ON A COMMON WAFER
- 专利标题（中）： 基于InP的异常双极晶体管，在通用波形上具有发射和发射的特性
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申请号： US12616374申请日： 2009-11-11
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公开(公告)号： US20100059793A1公开(公告)日： 2010-03-11
- 发明人: Mary Chen , Marko Sokolich
- 申请人： Mary Chen , Marko Sokolich
- 申请人地址： US CA Malibu
- 专利权人： HRL LABORATORIES, LLC
- 当前专利权人： HRL LABORATORIES, LLC
- 当前专利权人地址： US CA Malibu
- 主分类号： H01L27/082
- IPC分类号： H01L27/082 ; H01L21/8222
摘要：
A wafer comprising at least one emitter-up Heterojunction Bipolar Transistor (HBT) and at least one emitter-down HBT on a common InP based semiconductor wafer. Isolation and N-type implants into the device layers differentiate an emitter-down HBT from an emitter-up HBT. The method for preparing a device comprises forming identical layers for all HBTs and performing ion implantation to differentiate an emitter-down HBT from an emitter-up HBT.