发明申请
- 专利标题: ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER
- 专利标题(中): 具有流量均衡器和下层的蚀刻室
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申请号: US12624155申请日: 2009-11-23
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公开(公告)号: US20100065213A1公开(公告)日: 2010-03-18
- 发明人: James D. Carducci , Kin Pong Lo , Kallol Bera , Michael C. Kutney , Matthew L. Miller
- 申请人: James D. Carducci , Kin Pong Lo , Kallol Bera , Michael C. Kutney , Matthew L. Miller
- 主分类号: H01L21/306
- IPC分类号: H01L21/306
摘要:
A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.
公开/授权文献
- US08313578B2 Etching chamber having flow equalizer and lower liner 公开/授权日:2012-11-20