A multilayer chip varistor is provided as one having excellent heat radiation performance. A thickness between a first principal face 3 and an outermost internal electrode layer 11A is smaller than a thickness between an internal electrode layer 21 and the outermost internal electrode layer 11A, and because of this configuration, heat generated from a bottom face of a semiconductor light emitting device LE1 is efficiently transferred to the outermost internal electrode layer 11A having a high thermal conductivity. Furthermore, in the multilayer chip varistor V1 of an electronic component EC1, the outermost internal electrode layer 11A has a first internal electrode 13 electrically connected to a first connection electrode 7 and a first terminal electrode 5 through first through-hole conductors 17, and a second internal electrode 15 electrically connected to a second connection electrode 8 and a second terminal electrode 6 through second through-hole conductors 27. Because of this configuration, heat H generated from the semiconductor light emitting device LE1 is transferred to both the first internal electrode 13 and the second internal electrode 15, so as to be transferred to the first through-hole conductors 17 and the second through-hole conductors 27. This leads to well-balanced transfer of heat to the first through-hole conductors 17 and the second through-hole conductors 27.