发明申请
- 专利标题： FILM QUALITY EVALUATION METHOD, APPARATUS THEREFOR, AND PRODUCTION SYSTEM FOR THIN-FILM DEVICE
- 专利标题（中）： 薄膜质量评估方法，其设备及薄膜装置的生产系统
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申请号： US12517200申请日： 2007-10-31
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公开(公告)号： US20100067010A1公开(公告)日： 2010-03-18
- 发明人: Satoshi Sakai , Yoichiro Tsumura , Masami Iida , Kohei Kawazoe
- 申请人： Satoshi Sakai , Yoichiro Tsumura , Masami Iida , Kohei Kawazoe
- 申请人地址： JP Tokyo
- 专利权人： MITSUBISHI HEAVY INDUSTRIES , LTD.
- 当前专利权人： MITSUBISHI HEAVY INDUSTRIES , LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-039596 20070220
- 国际申请： PCT/JP2007/071178 WO 20071031
- 主分类号： G01J3/46
- IPC分类号： G01J3/46 ; H01L21/66 ; G01N21/55 ; G01N21/27
摘要：
An object is to improve production efficiency as well as reducing the burden on an operator. Light is radiated on a crystalline silicon film used for a thin-film silicon device, reflection light reflected by the crystalline silicon film is detected, a parameter of the luminance of the detected reflection light is measured, and film quality evaluation of the crystalline silicon film is performed in accordance with whether the parameter of the luminance is within a predetermined proper range or not.