发明申请
- 专利标题: METHOD OF FORMING BARRIER FILM
- 专利标题(中): 形成障碍膜的方法
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申请号: US12447533申请日: 2007-11-08
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公开(公告)号: US20100068891A1公开(公告)日: 2010-03-18
- 发明人: Masanobu Hatanaka , Michio Ishikawa , Kanako Tsumagari
- 申请人: Masanobu Hatanaka , Michio Ishikawa , Kanako Tsumagari
- 优先权: JP2006-304485 20061109; JP2007-047943 20070227
- 国际申请: PCT/JP2007/071720 WO 20071108
- 主分类号: H01L21/46
- IPC分类号: H01L21/46
摘要:
A barrier film made of a ZrB2 film is formed by use of a coating apparatus provided with plasma generation means including a coaxial resonant cavity and a microwave supply circuit for exciting the coaxial resonant cavity, the coaxial resonant cavity including spaced apart conductors provided around the periphery of a nonmetallic pipe for reactive gas introduction, the coaxial resonant cavity having an inner height equal to an integer multiple of one-half of the exciting wavelength, the plasma generation means being constructed such that a gas injected from one end of the nonmetallic pipe is excited into a plasma state by a microwave when the gas is in a region of the nonmetallic pipe which is not covered with the conductors and such that the gas in the plasma state is discharged from the other end of the nonmetallic pipe.
公开/授权文献
- US08084368B2 Method of forming barrier film 公开/授权日:2011-12-27
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