发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12373185申请日： 2006-07-21
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公开(公告)号： US20100072451A1公开(公告)日： 2010-03-25
- 发明人: Motoyasu Terao , Satoru Hanzawa , Takahiro Morikawa , Kenzo Kurotsuchi , Riichiro Takemura , Norikatsu Takaura , Nozomu Matsuzaki
- 申请人： Motoyasu Terao , Satoru Hanzawa , Takahiro Morikawa , Kenzo Kurotsuchi , Riichiro Takemura , Norikatsu Takaura , Nozomu Matsuzaki
- 国际申请： PCT/JP2006/314457 WO 20060721
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L27/04
摘要：
A recording layer 52 made of a chalcogenide material which stores a high-resistance state of a high electrical resistance value and a low-resistance state of a low electrical resistance value is used as a memory element RM in a memory cell region, and it is formed so that a concentration of Ga or In of a first layer 52a positioned on a lower electrode TP side of the recording layer 52 is higher than the corresponding concentration of a second layer 52b positioned on an upper electrode 53 side. For example, the recording layer is formed so that a content of Ga or In of the second layer is 5 atomic % or more smaller than that of the first layer. Also, a circuit which can reverse the voltage polarity between the upper electrode and the lower electrode in a set operation and a reset operation is provided.
公开/授权文献
- US08319204B2 Semiconductor device 公开/授权日：2012-11-27