发明申请
- 专利标题： Semiconductor device and associated methods
- 专利标题（中）： 半导体器件及相关方法
-
申请号： US12585313申请日： 2009-09-11
-
公开(公告)号： US20100072556A1公开(公告)日： 2010-03-25
- 发明人: Hongbae PARK , Hagju CHO , Sunghun HONG , Sangjin HYUN , Hoonjoo NA , Hyung-seok HONG
- 申请人： Hongbae PARK , Hagju CHO , Sunghun HONG , Sangjin HYUN , Hoonjoo NA , Hyung-seok HONG
- 优先权： KR10-2008-0092245 20080919; KR10-2009-0041271 20090512
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L29/78
摘要：
A semiconductor device and associated methods, the semiconductor device including a semiconductor substrate with a first well region, a first gate electrode disposed on the first well region, and a first N-type capping pattern, a first P-type capping pattern, and a first gate dielectric pattern disposed between the first well region and the first gate electrode.
公开/授权文献
- US08044469B2 Semiconductor device and associated methods 公开/授权日：2011-10-25
信息查询
IPC分类:
