发明申请
- 专利标题： Semiconductor Light Emitting Devices With Non-Epitaxial Upper Cladding
- 专利标题（中）： 具有非外延上层的半导体发光器件
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申请号： US12237106申请日： 2008-09-24
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公开(公告)号： US20100074292A1公开(公告)日： 2010-03-25
- 发明人: David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
- 申请人： David P. Bour , Christopher L. Chua , Noble M. Johnson , Zhihong Yang
- 申请人地址： US CA Palo Alto
- 专利权人： Palo Alto Research Center Incorporated
- 当前专利权人： Palo Alto Research Center Incorporated
- 当前专利权人地址： US CA Palo Alto
- 主分类号： H01S5/026
- IPC分类号： H01S5/026
摘要：
The AlGaN upper cladding layer of a nitride laser diode is replaced by a non-epitaxial layer, such as metallic silver. If chosen to have a relatively low refractive index value, the mode loss from absorption in the non-epitaxial cladding layer is acceptably small. If also chosen to have a relatively high work-function, the non-epitaxial layer forms an electrical contact to the nitride semiconductors. An indium-tin-oxide layer may also be employed with the non-epitaxial cladding layer.
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