发明申请
- 专利标题: Ruthenium interconnect with high aspect ratio and method of fabrication thereof
- 专利标题(中): 具有高纵横比的钌互连及其制造方法
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申请号: US12286149申请日: 2008-09-29
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公开(公告)号: US20100078815A1公开(公告)日: 2010-04-01
- 发明人: Zheng Wang , Connie Wang , Erik Wilson , Wen Yu , Robert Chiu
- 申请人: Zheng Wang , Connie Wang , Erik Wilson , Wen Yu , Robert Chiu
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L21/44
摘要:
An electrically conductive interconnect is provided through an opening in a dielectric layer, electrically connecting two conductive layers. In one embodiment, the interconnect is formed by ruthenium entirely filling the opening in the dielectric layer. In another embodiment, an adhesion layer of titanium is provided in the opening prior to providing the ruthenium. In using this approach, an aspect ratio (i.e., the ratio of the length of the interconnect to the width thereof) of 20:1 or greater is achievable.
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