A first shield portion located below an MR stack includes a first main shield layer, a first antiferromagnetic layer, and a first magnetization controlling layer including a first ferromagnetic layer exchange-coupled to the first antiferromagnetic layer. A second shield portion located on the MR stack includes a second main shield layer, a second antiferromagnetic layer, and a second magnetization controlling layer including a second ferromagnetic layer exchange-coupled to the second antiferromagnetic layer. The MR stack includes two free layers magnetically coupled to the two magnetization controlling layers. Only one of the two magnetization controlling layers includes a third ferromagnetic layer that is antiferromagnetically exchange-coupled to the first or second ferromagnetic layer through a nonmagnetic middle layer. The first shield portion includes an underlayer disposed on the first main shield layer, and the first antiferromagnetic layer is disposed on the underlayer.